Data Sheet. February File Number These are P-Channel enhancement mode silicon gate. They are advanced power.
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They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PD - C. Product Summary. IRF V. The efficient geometry and unique processing of this latest. They are well suited for applications such as switching.
Absolute Maximum Ratings. Continuous Drain Current. Power Dissipation. Linear Derating Factor. Gate-to-Source Voltage. Operating Junction.
Storage Temperature Range. Lead Temperature. For footnotes refer to the last page. No Preview Available! RDS on. VGS th. Drain-to-Source Breakdown Voltage. Temperature Coefficient of Breakdown. Static Drain-to-Source On-State. Gate Threshold Voltage. Forward Transconductance. Zero Gate Voltage Drain Current. Gate-to-Source Leakage Forward. Gate-to-Source Leakage Reverse. Total Gate Charge. Gate-to-Source Charge. Turn-On Delay Time. Rise Time.
Turn-Off Delay Time. Fall Time. Total Inductance. Ciss Input Capacitance. Coss Output Capacitance. Crss Reverse Transfer Capacitance. Min Typ Max Units. Test Conditions. Source-Drain Diode Ratings and Characteristics. Diode Forward Voltage. Reverse Recovery Time. Reverse Recovery Charge. Forward Turn-On Time. Intrinsic turn-on time is negligible.
IRF9130 MOSFET. Datasheet pdf. Equivalent